LS310 SOT-23 6L

LS310/311/312/313 Monolithic Dual Matched NPN Transistor LOW NOISE AND THERMALLY MATCHED MONOLITHIC DUAL NPN TRANSISTOR Absolute Maximum Ratings TO-71 6L Top View @ 25 °C (unless otherwise stated) Maximum Temperatures E1 E2 Storage Temperature -65 to +150°C Junction Operating Temperature -55 to +150°C 4 3 6 1 B2 5 C2 Maximum Power Dissipation Continuous Power Dissipation 400mW Maximum Voltages Maximum Power Supply (LS312, see VCEO for others) Collector to Collector (LS312, see VCEO for others) 60V Maximum Current Collector Current Features • Low Voltage Noise, 1.8nV/√Hz-typ at f=1kHz, IC=100μA • Low Vbe Matching 0.5mV-max, 0.2mV-typ (LS312) • Low Vbe Temperature Drift 0.5 µV/˚C-typ (LS312) • High Current Gain 400-Min (LS313) • High VCBO Breakdown Voltage-60V-min (LS312) • High VCEO Breakdown Voltage-60V-min (LS312) • High VCCO Breakdown Voltage +/-60V-min • Dual PNP Counterpart Version: LS350/1/2 E1 E2 2 B1 4 3 6 1 B2 5 2 B1 C2 C1 SOT-23 Top View C1 SOIC 8L Top View PDIP 8L Top View 6 C1 C1 1 8 C2 C1 1 8 C2 E2 2 5 E1 B1 2 7 B2 B1 2 7 B2 B2 3 4 C2 B1 1 60V TO-78 6L Top View 40mA Benefits • Unique Monolithic Dual Design Construction • Improved System Noise Performance • Wide Range of Parameter Operations • Excellent Base-Emitter Voltage Differential (ΔVBE) and Drift • Excellent Base Current Differential (IB1IB2) and Drift • High Frequency Performance • Excellent Matching and Thermal Tracking • High Voltage Operation-60V-min (LS312) E1 3 6 E2 E1 3 6 E2 NC 4 5 NC NC 4 5 NC Applications • Input Differential and Preamplifier Stages • Multivibrator Circuits • Music Synthesizers • Current Sources • Discreate Operational and Instrumentation Amplifiers • Clocking Networks • Voltage Controlled Oscillators • Frequency Division Description The LS310/11/12/13 monolithic dual matched NPN transistors due to their higher transconductance and have a positive offer excellent matching characteristics and low voltage noise temperature coefficient of current (Ib and Ic). (refer to figure-14 for details.) Due to high breakdown specifications, the products are suitable Low 2pF-max Cobo output capacitance further improves in high voltage applications requiring up to 60VMax. In addition frequency characteristics and decreases signal distortion at to very small outline SOT-23 6L package, these products are the output. Low noise performance, low offset voltage and available in TO-78 6L, TO-71 6L, PDIP 8L and SOIC 8L high bandwidth, make the products ideal for differential input packages. stages and preamplifier applications. The LS310/11/12/13 is offered with custom electrical Tight current gain matching, high current gain and high specifications called SELXXXX. Contact the factory for modified breakdown make the LS312 and LS313 an ideal choice for electrical specifications for these special versions of the signal amplifying, accurate current biasing and mirroring LS310/11/12/13 SEL-XXXX. circuits and designs. Refer to LS350/1/2 products for dual PNP counterpart versions. LS310/11/12/13 output stages need very little error correction, Doc 201121 01/06/2021 Rev# A15 ECN# LS31/311/312/313 www.linearsystems.com Page 1 of 6 LS310/311/312/313 Monolithic Dual Matched NPN Transistor Electrical Characteristics @ 25 °C (Unless Otherwise Stated) SYMBOL CHARACTERISTICS LS310 LS311 LS312 LS313 UNITS CONDITIONS BVCBO Collector to Base Voltage 25 45 60 45 MIN. V IC = 10µA, IE = 0 BVCEO Collector to Emitter Voltage 25 45 60 45 MIN. V IC = 1mA, IB = 0 BVEBO Emitter-Base Breakdown Voltage 6.0 6.0 6.0 6.0 MIN. V IE = 10µA, IC = 0 BVCCO Collector to Collector Voltage 45 45 60 45 MIN. V IC = 10µA, IE = IB = 0A hFE DC Current Gain 150 150 200 400 MIN. 1000 MAX. -- IC = 10µA, VCE = 5V hFE DC Current Gain 150 150 200 400 MIN. -- IC = 100µA, VCE = 5V hFE DC Current Gain 150 150 200 400 MIN. -- IC = 1mA, VCE = 5V Collector Saturation Voltage 0.25 0.25 0.25 0.25 MAX. V IC = 1mA, IB = 0.1mA ICBO Collector Cutoff Current 0.2 0.2 0.2 0.2 MAX. nA IE = 0, VCB = 5V IEBO Emitter Cutoff Current 0.2 0.2 0.2 0.2 MAX. nA IC = 0, VEB = 3V COBO Output Capacitance 2 2 2 2 MAX. pF IE = 0, VCB = 5V, f = 1MHz CC1C2 Collector to Collector Capacitance 2 2 2 2 MAX. pF VCC = 0V IC1C2 Collector to Collector Leakage Current 1.0 1.0 1.0 1.0 MAX. µA VCC = 30V fT Current Gain Bandwidth Product 200 200 200 200 MIN. MHz en Voltage Noise 1.3 1.3 1.3 1.3 TYP. nV/√Hz en Voltage Noise 1.5 1.5 1.5 1.5 TYP. nV/√Hz en Voltage Noise 1.8 1.8 1.8 1.8 TYP. nV/√Hz en Voltage Noise 3.8 3.8 3.8 3.8 TYP. nV/√Hz VCE(SAT) IC = 1mA, VCE = 5V VCE = 5V, IC = 1mA F = 1kHz, NBW = 1Hz VCE = 5V, IC = 1mA f = 10Hz, NBW = 1Hz VCE = 5V, IC = 100μA F = 1kHz, NBW = 1Hz VCE = 5V, IC = 100μA F = 10Hz, NBW = 1Hz Notes 1. Absolute maximum ratings are limiting values above which serviceability may be impaired. 2. Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 3% 3. All characteristics MIN/TYP/MAX numbers are absolute values. Negative values indicate electrical polarity only. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Doc 201121 01/06/2021 Rev# A15 ECN# LS31/311/312/313 www.linearsystems.com Page 2 of 6 LS310/311/312/313 Monolithic Dual Matched NPN Transistor Typical Characteristics Doc 201121 01/06/2021 Rev# A15 ECN# LS31/311/312/313 www.linearsystems.com Page 3 of 6 LS310/311/312/313 Monolithic Dual Matched NPN Transistor Typical Characteristics Doc 201121 01/06/2021 Rev# A15 ECN# LS31/311/312/313 www.linearsystems.com Page 4 of 6 LS310/311/312/313 Monolithic Dual Matched NPN Transistor Typical Characteristics Ordering Information Standard Part Call-Out LS310/311/312/313 TO-71 6L RoHS LS310/311/312/313 TO-78 6L RoHS LS310/311/312/313 PDIP 8L RoHS LS310/311/312/313 SOIC 8L RoHS LS310/311/312/313 SOT-23 6L RoHS Custom Part Call-out Custom Parts Include SEL+4 Digit Numeric Code LS310/311/312/313 TO-71 6L RoHS SELXXXX LS310/311/312/313 TO-78 6L RoHS SELXXXX LS310/311/312/313 PDIP 8L RoHS SELXXXX LS310/311/312/313 SOIC 8L RoHS SELXXXX LS310/311/312/313 SOT-23 6L RoHS SELXXXX Doc 201121 01/06/2021 Rev# A15 ECN# LS31/311/312/313 www.linearsystems.com Page 5 of 6 LS310/311/312/313 Monolithic Dual Matched NPN Transistor Package Dimensions SOT-23 PDIP PDIP 8 Lead SOIC-A 8 Lead SOT-23 6 Lead 0.95 2.80 3.00 5 3 Top View Top View 2 1.90 0.060 0.35 0.50 Top View 6 1 4 1 8 2 7 3 6 4 5 0.100 0.375 0.038 Side View 0.90 1.30 Side View Side View 0.250 1.50 1.75 2.60 3.00 0.09 0.20 0.00 0.15 0.10 0.60 0.145 0.170 0.295 0.320 DIMENSIONS IN DIMENSIONS IN INCHES INCHES DIMENSIONS IN INCHES DIMENSIONS IN DIMENSIONS IN MILLIMETERS MILLIMETERS TO-71 6 Lead 2 3 1 4 6 5 Bottom View Bottom View Side View Side View TO-78 6 Lead DIMENSIONS IN INCHES Doc 201121 01/06/2021 Rev# A15 ECN# LS31/311/312/313 0.210 0.170 2 3 1 4 6 5 DIMENSIONS IN INCHES www.linearsystems.com Page 6 of 6